Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

Takuma Suzuki; Junji Senzaki; Tetsuo Hatakeyama; Kenji Fukuda; Takashi Shinohe; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.615-617.557

Paper Titles

AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
p.541

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
p.545

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
p.549

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.553

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
p.557

High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
p.561

Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN
p.565

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
p.569

On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC
p.573

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Reliability of 4H-SiC(000-1) MOS Gate Oxide Using...

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation

Abstract:

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.