Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC

Chee Chung Hoong; Kuan Yew Cheong

doi:10.4028/www.scientific.net/MSF.615-617.545

Paper Titles

Oxidation Process of SiC by RTP Technique
p.529

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
p.533

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
p.537

AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
p.541

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
p.545

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
p.549

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.553

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
p.557

High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
p.561

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Effect of Post Deposition Annealing on the...

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC

Abstract:

The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on metal-oxide-semiconductor characteristics of sol-gel derived HfO2 gate on n-type 4H-SiC have been investigated. After 30 min of the annealing, an accumulation of positive effective oxide charge (Qeff) has been observed in all samples. The total interface trap density and Qeff of the oxides annealed at 850 and 950 oC are comparable but an increment and reduction of the respective densities have been recorded when the oxide was annealed at 1050 oC. A reduction of near interface trap density has been revealed as the annealing temperature has been increased. These observation was closely related to the increment of leakage current density as the annealing temperature increased.