Oxidation Process of SiC by RTP Technique

Abstract:

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The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

529-532

DOI:

10.4028/www.scientific.net/MSF.615-617.529

Citation:

N. Kwietniewski et al., "Oxidation Process of SiC by RTP Technique", Materials Science Forum, Vols. 615-617, pp. 529-532, 2009

Online since:

March 2009

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Price:

$35.00

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