Oxidation Process of SiC by RTP Technique

N. Kwietniewski; Krystyna Gołaszewska; T.T. Piotrowski; W. Rzodkiewicz; Tomasz Gutt; M. Sochacki; Jan Szmidt; Anna Piotrowska

doi:10.4028/www.scientific.net/MSF.615-617.529

Paper Titles

4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer
p.513

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
p.517

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
p.521

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO₂/SiC Interfaces
p.525

Oxidation Process of SiC by RTP Technique
p.529

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
p.533

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
p.537

AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
p.541

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
p.545

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Oxidation Process of SiC by RTP Technique

Oxidation Process of SiC by RTP Technique

Abstract:

The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes.