Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence

Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; K. Kojima; K. Kawano

doi:10.4028/www.scientific.net/MSF.615-617.517

Paper Titles

Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy
p.501

Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
p.505

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry
p.509

4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer
p.513

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
p.517

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
p.521

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO₂/SiC Interfaces
p.525

Oxidation Process of SiC by RTP Technique
p.529

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
p.533

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Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence

Abstract:

Single event transient currents induced in 6H-SiC MOS capacitors are measured by using oxygen ions. Charges collected from the samples are calculated by the transient currents. Applying the drift-diffusion model to the charges, the diffusion length of electron is estimated. Transient currents induced in the gamma ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after gamma ray irradiation.