Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO

Michael Grieb; Masato Noborio; Dethard Peters; Anton J. Bauer; Peter Friedrichs; Tsunenobu Kimoto; Heiner Ryssel

doi:10.4028/www.scientific.net/MSF.615-617.521

Paper Titles

Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
p.505

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry
p.509

4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer
p.513

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
p.517

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
p.521

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO₂/SiC Interfaces
p.525

Oxidation Process of SiC by RTP Technique
p.529

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
p.533

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
p.537

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Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO

Abstract:

In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by C-V, I-V measurements and by constant current stress. Compared to thermally grown oxides, the deposited oxides annealed in N2O or NO showed improved electrical properties. Dit-values lower than 1011cm-2eV-1 have been achieved for the NO sample. The intrinsic QBD-values of deposited and annealed oxides are one order of magnitudes higher than the highest values reported for thermally grown oxides. Also MOSFETS were fabricated with a channel mobility of 20.05 cm2/Vs for the NO annealed deposited oxide. Furthermore annealing in NO is preferred to annealing in N2O regarding µFE- and QBD-values.