Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO

Abstract:

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In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by C-V, I-V measurements and by constant current stress. Compared to thermally grown oxides, the deposited oxides annealed in N2O or NO showed improved electrical properties. Dit-values lower than 1011cm-2eV-1 have been achieved for the NO sample. The intrinsic QBD-values of deposited and annealed oxides are one order of magnitudes higher than the highest values reported for thermally grown oxides. Also MOSFETS were fabricated with a channel mobility of 20.05 cm2/Vs for the NO annealed deposited oxide. Furthermore annealing in NO is preferred to annealing in N2O regarding µFE- and QBD-values.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

521-524

DOI:

10.4028/www.scientific.net/MSF.615-617.521

Citation:

M. Grieb et al., "Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO", Materials Science Forum, Vols. 615-617, pp. 521-524, 2009

Online since:

March 2009

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$35.00

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