4H-SiC Oxide Characterization with SIMS Using a 13C Tracer

Jody Fronheiser; Kevin Matocha; Vinayak Tilak; Leonard C. Feldman

doi:10.4028/www.scientific.net/MSF.615-617.513

Paper Titles

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
p.497

Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy
p.501

Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
p.505

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry
p.509

4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer
p.513

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
p.517

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
p.521

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO₂/SiC Interfaces
p.525

Oxidation Process of SiC by RTP Technique
p.529

HomeMaterials Science ForumMaterials Science Forum Vols. 615-6174H-SiC Oxide Characterization with SIMS Using a...

4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer

Abstract:

The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3x1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5x1014 cm-2 carbon build up at or near the interface.