4H-SiC Oxide Characterization with SIMS Using a 13C Tracer

Abstract:

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The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3x1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5x1014 cm-2 carbon build up at or near the interface.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

513-516

DOI:

10.4028/www.scientific.net/MSF.615-617.513

Citation:

J. Fronheiser et al., "4H-SiC Oxide Characterization with SIMS Using a 13C Tracer", Materials Science Forum, Vols. 615-617, pp. 513-516, 2009

Online since:

March 2009

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Price:

$35.00

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