Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/www.scientific.net/MSF.615-617

Paper Title Page

Authors: Tatsunori Sugimoto, Toshiya Noro, Satarou Yamaguchi, Hideyoshi Majima, Tomohisa Kato

Abstract: Diamond saw is generally used to make the silicon carbide (SiC) wafers from ingots, but it takes long time for cutting. We have used the...

609
Authors: Matthias Holz, Jochen Hilsenbeck, Ralf Otremba, Alexander Heinrich, Peter Türkes, Roland Rupp

Abstract: SiC power devices have reached a high market penetration, especially for high-voltage applications like switch mode power supplies. In the...

613
Authors: Marcel Placidi, Marcin Zielinski, Gabriel Abadal, Josep Montserrat, Phillippe Godignon

Abstract: The fabrication of freestanding SiC microstructures on Silicon-On-Insulator (SOI) and semi-insulating Silicon substrates is reported. SiC...

617
Authors: Florentina Niebelschütz, Klemens Brueckner, Volker Cimalla, Matthias A. Hein, Jörg Pezoldt

Abstract: The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the...

621
Authors: Anne Henry, Erik Janzén, Enrico Mastropaolo, Rebecca Cheung

Abstract: Cantilever resonators have been fabricated from two types of materials, single crystal and polycrystalline 3C-SiC films. The films have been...

625
Authors: Ruggero Anzalone, Christopher Locke, Andrea Severino, Davide Rodilosso, Cristina Tringali, Gaetano Foti, Stephen E. Saddow, Francesco La Via, Giuseppe D'Arrigo

Abstract: The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on bulk material or on the SiC surface. The...

629
Authors: Christopher Locke, G. Kravchenko, P. Waters, J. D. Reddy, K. Du, A.A. Volinsky, Christopher L. Frewin, Stephen E. Saddow

Abstract: Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of...

633
Authors: Siegmund Greulich-Weber, B. Friedel

Abstract: We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel...

637
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: The Ti/4H-SiC Schottky barrier diodes with a field limiting ring (FLR) structure are fabricated. Two types of SBDs are prepared; one (SBD-A)...

643
Authors: Denis Perrone, Marco Naretto, Sergio Ferrero, Luciano Scaltrito, C. Fabrizio Pirri

Abstract: We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain Schottky barrier diodes (SBDs) capable to operate at...

647

Showing 151 to 160 of 247 Paper Titles