Performance Modification of SiC MEMS
The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the SiC-layers grown on Si(111) by manipulating the nucleation conditions and growth conditions with Ge deposition prior to the carbonization and epitaxial growth. Previous Raman analysis of the SiC-layers and measured resonant frequencies and quality factors of the processed MEMS show a dependence on the Ge amount at the interface of the Si/SiC heterostructure, which allows to adjust the MEMS properties to the requirements needed for certain applications.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
F. Niebelschütz et al., "Performance Modification of SiC MEMS", Materials Science Forum, Vols. 615-617, pp. 621-624, 2009