Performance Modification of SiC MEMS

Florentina Niebelschütz; Klemens Brueckner; Volker Cimalla; Matthias A. Hein; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.615-617.621

Paper Titles

The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
p.605

Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide
p.609

SiC Power Devices: Product Improvement Using Diffusion Soldering
p.613

SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
p.617

Performance Modification of SiC MEMS
p.621

Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
p.625

Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
p.629

3C-SiC Films on Si for MEMS Applications: Mechanical Properties
p.633

Bottom-Up Routes to Porous Silicon Carbide
p.637

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Performance Modification of SiC MEMS

Performance Modification of SiC MEMS

Abstract:

The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the SiC-layers grown on Si(111) by manipulating the nucleation conditions and growth conditions with Ge deposition prior to the carbonization and epitaxial growth. Previous Raman analysis of the SiC-layers and measured resonant frequencies and quality factors of the processed MEMS show a dependence on the Ge amount at the interface of the Si/SiC heterostructure, which allows to adjust the MEMS properties to the requirements needed for certain applications.