SiC Power Devices: Product Improvement Using Diffusion Soldering

Matthias Holz; Jochen Hilsenbeck; Ralf Otremba; Alexander Heinrich; Peter Türkes; Roland Rupp

doi:10.4028/www.scientific.net/MSF.615-617.613

Paper Titles

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers
p.597

Electrochemical Polishing of p-Type 4H SiC
p.601

The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
p.605

Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide
p.609

SiC Power Devices: Product Improvement Using Diffusion Soldering
p.613

SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
p.617

Performance Modification of SiC MEMS
p.621

Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
p.625

Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
p.629

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617SiC Power Devices: Product Improvement Using...

SiC Power Devices: Product Improvement Using Diffusion Soldering

Abstract:

SiC power devices have reached a high market penetration, especially for high-voltage applications like switch mode power supplies. In the past, however, the superior material properties like, e.g., good thermal conductivity, have often not been put to full use due to the limitations of current packaging techniques. Especially the inferior thermal conductivity of current die attach materials have been an obstacle to realise the full potential of SiC technologies. In this paper, we describe in detail the use of diffusion solder for the die attach of SiC chips. Replacing the conventional solder layer by a thin metal stack for diffusion soldering, the thermal conductivity of the device is significantly improved. In addition, we show the positive impact of diffusion soldering on the assembly process and on the device reliability. These results are interesting for, both, SiC diodes and switches.