Electrochemical Polishing of p-Type 4H SiC

Yue Ke; Fei Yan; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.615-617.601

Paper Titles

Process Optimization for High Temperature SiC Lateral Devices
p.585

A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations
p.589

HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces
p.593

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers
p.597

Electrochemical Polishing of p-Type 4H SiC
p.601

The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
p.605

Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide
p.609

SiC Power Devices: Product Improvement Using Diffusion Soldering
p.613

SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
p.617

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Electrochemical Polishing of p-Type 4H SiC

Electrochemical Polishing of p-Type 4H SiC

Abstract:

This article discusses the electrochemical polishing of silicon-face p-type 4H SiC using diluted aqueous HF solution. Etchings on the silicon and carbon faces of SiC samples are performed and compared. The experimental results show that the RMS surface roughness of the electrochemically polished Si-face could be as low as about 2 nm. Carbon-face electrochemical polishing gives a rougher surface. Therefore, silicon-face 4H SiC is a better candidate for MEMS processing. The underlying mechanism is also discussed.