Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers

Kinga Kościewicz; Wlodek Strupiński; Andrzej Roman Olszyna

doi:10.4028/www.scientific.net/MSF.615-617.597

Paper Titles

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC
p.581

Process Optimization for High Temperature SiC Lateral Devices
p.585

A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations
p.589

HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces
p.593

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers
p.597

Electrochemical Polishing of p-Type 4H SiC
p.601

The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
p.605

Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide
p.609

SiC Power Devices: Product Improvement Using Diffusion Soldering
p.613

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Comparison between Polishing Etching of On and...

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers

Abstract:

Crystallographic quality of the epitaxial layers depends on the process temperature, partial pressures of active components and the surface polarity and also on the crystallographic quality of the subsurface layer resulting from the preparation of the substrate. The polishing etching in hydrogen-propane atmosphere of 4H-SiC substrate of different orientations and polarity was studied. The optimization of the polishing etching has been achieved with respect to the flow of C3H8, the duration and the temperature of the process. The investigation of the surface of SiC substrate before and after in situ polishing-etching in H2+C3H8 atmosphere was carried out by Nomarski interference contrast microscopy (DIC) and atomic force microscope (AFM).