SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates

Marcel Placidi; Marcin Zielinski; Gabriel Abadal; Josep Montserrat; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.615-617.617

Paper Titles

Electrochemical Polishing of p-Type 4H SiC
p.601

The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
p.605

Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide
p.609

SiC Power Devices: Product Improvement Using Diffusion Soldering
p.613

SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
p.617

Performance Modification of SiC MEMS
p.621

Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
p.625

Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
p.629

3C-SiC Films on Si for MEMS Applications: Mechanical Properties
p.633

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SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates

Abstract:

The fabrication of freestanding SiC microstructures on Silicon-On-Insulator (SOI) and semi-insulating Silicon substrates is reported. SiC layers were grown on SOI and semi-insulating Si by chemical vapour deposition (CVD) and to avoid the instability currently obtained in SOI structures, the growth process parameters have been optimized. Isotropic wet chemical etching of the Si sacrificial layer released the electrostatic SiC microstructures patterned by dry etching. Moreover a new concept for reducing the gap between resonators and electrodes by the uses of bistable mobile electrodes is introduced.