Bottom-Up Routes to Porous Silicon Carbide

Siegmund Greulich-Weber; B. Friedel

doi:10.4028/www.scientific.net/MSF.615-617.637

Paper Titles

Performance Modification of SiC MEMS
p.621

Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
p.625

Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
p.629

3C-SiC Films on Si for MEMS Applications: Mechanical Properties
p.633

Bottom-Up Routes to Porous Silicon Carbide
p.637

Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure
p.643

4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
p.647

Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC
p.651

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
p.655

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Bottom-Up Routes to Porous Silicon Carbide

Bottom-Up Routes to Porous Silicon Carbide

Abstract:

We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel processes combined with carbothermal re¬duction. We obtain monodisperse regular pores of well defined diameters by using carbon sphere templates which are removed after SiC infiltration. A different way is a sol-gel based conversion of graphite bodies into SiC, which transfers the porosity from the graphite matrix into the final SiC product. Thus a large variety of porosity features are available, originating either from natural poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous base material. Whereas all our pristine porous sol-gel derived silicon carbide products are semi-insulating, doping is possible, during the growth to modifiy the electrical and optical properties.