Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC

C. Koliakoudakis; J. Dontas; S. Karakalos; M. Kayambaki; S. Ladas; G. Konstantinidis; S. Kennou; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.615-617.651

Paper Titles

3C-SiC Films on Si for MEMS Applications: Mechanical Properties
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Bottom-Up Routes to Porous Silicon Carbide
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Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure
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4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
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Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC
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Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
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Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement
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Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
p.663

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
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HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Fabrication and Characterization of Cr-Based...

Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC

Abstract:

The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.