Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC
The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
C. Koliakoudakis et al., "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 651-654, 2009