The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
G. M. Dolny et al., "The Impact of Schottky Barrier Tunneling on SiC-JBS Performance", Materials Science Forum, Vols. 615-617, pp. 667-670, 2009