The Impact of Schottky Barrier Tunneling on SiC-JBS Performance

Abstract:

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The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

667-670

DOI:

10.4028/www.scientific.net/MSF.615-617.667

Citation:

G. M. Dolny et al., "The Impact of Schottky Barrier Tunneling on SiC-JBS Performance", Materials Science Forum, Vols. 615-617, pp. 667-670, 2009

Online since:

March 2009

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Price:

$35.00

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