The Impact of Schottky Barrier Tunneling on SiC-JBS Performance

Gary M. Dolny; Richard L. Woodin; T. Witt; J. Shovlin

doi:10.4028/www.scientific.net/MSF.615-617.667

Paper Titles

Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC
p.651

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
p.655

Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement
p.659

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
p.663

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
p.667

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
p.671

Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
p.675

Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.679

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
p.683

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The Impact of Schottky Barrier Tunneling on SiC-JBS Performance

Abstract:

The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.