Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC

Ryouji Kosugi; T. Sakata; Y. Sakuma; K. Suzuki; Tsutomu Yatsuo; H. Matsuhata; Hirotaka Yamaguchi; Ichiro  Nagai; Kenji Fukuda; Hajime Okumura; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.615-617.683

Paper Titles

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
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Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
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Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
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Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
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Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
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Grayscale Junction Termination for High-Voltage SiC Devices
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
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Lifetime Investigations of 4H-SiC PiN Power Diodes
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Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC

Abstract:

We have fabricated the four pn-type junction TEGs (Test Element Groups) having different structure. Those TEGs are close to the double-implanted (Di) MOSFETs, step by step from the simple pn diode. Voltage-current (V-I) characteristics of the hundred TEGs having p-well structure show similar blocking characteristics of those of simple pn diodes on the same wafer. This indicates that the p-well structure itself does not cause a significant deterioration on the blocking yield. On the other hand, the yield is significantly influenced by the annealing condition for ion-implanted layer. The oxide-related hard breakdown on the JFET region dominates the blocking yield. The reach-through breakdown of the TEGs having the n+ region within each p-well becomes largely suppressed by the high-temperature and short-time annealing.