Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation

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Electrical properties of p+n 4H-SiC(0001) diode formed by Al ion implantation to n-type epitaxial layer have been investigated as a function of Al doping concentration ranging from 1 x 1020 to 6 x 1020 /cm3 and the operation temperature. The n-type 4H-SiC(0001) epitaxial layer with a net donor concentration of 1 x 1016 /cm3 are multiply implanted by Al ions in the energy range from 30 to 170 keV at elevated temperature of 500 oC with a implantation layer thickness of 350 nm, followed by the annealing at 1900 oC for 1min using EBAS. On-state resistance of diode with Al concentration of 1 x 1020 /cm3 is estimated to be about 4.5 mcm2, while that for diode with Al concentration of 6 x 1020 /cm3 is 1.8 mcm2 at 25 oC. In the sample with Al concentration of 6 x 1020 /cm3 shows the positive temperature coefficient of on-state resistance of diode, while that for sample with Al concentration less than 3 x 1020 /cm3 is negative. The diode formed by Al implantation at the concentration of 6 x 1020 /cm3 is able to operate at the constant current density of 80 A/cm2 at the bias of 2.9 V independent to operation temperature.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

679-682

DOI:

10.4028/www.scientific.net/MSF.615-617.679

Citation:

M. Satoh et al., "Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation", Materials Science Forum, Vols. 615-617, pp. 679-682, 2009

Online since:

March 2009

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Price:

$35.00

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