Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation

Masataka Satoh; Shohei Nagata; Tohru Nakamura; Hiroshi Doi; Masami Shibagaki

doi:10.4028/www.scientific.net/MSF.615-617.679

Paper Titles

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
p.663

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
p.667

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
p.671

Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
p.675

Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.679

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
p.683

Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
p.687

Grayscale Junction Termination for High-Voltage SiC Devices
p.691

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
p.695

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Doping Level Dependence of Electrical Properties...

Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation

Abstract:

Electrical properties of p+n 4H-SiC(0001) diode formed by Al ion implantation to n-type epitaxial layer have been investigated as a function of Al doping concentration ranging from 1 x 1020 to 6 x 1020 /cm3 and the operation temperature. The n-type 4H-SiC(0001) epitaxial layer with a net donor concentration of 1 x 1016 /cm3 are multiply implanted by Al ions in the energy range from 30 to 170 keV at elevated temperature of 500 oC with a implantation layer thickness of 350 nm, followed by the annealing at 1900 oC for 1min using EBAS. On-state resistance of diode with Al concentration of 1 x 1020 /cm3 is estimated to be about 4.5 mcm2, while that for diode with Al concentration of 6 x 1020 /cm3 is 1.8 mcm2 at 25 oC. In the sample with Al concentration of 6 x 1020 /cm3 shows the positive temperature coefficient of on-state resistance of diode, while that for sample with Al concentration less than 3 x 1020 /cm3 is negative. The diode formed by Al implantation at the concentration of 6 x 1020 /cm3 is able to operate at the constant current density of 80 A/cm2 at the bias of 2.9 V independent to operation temperature.