Grayscale Junction Termination for High-Voltage SiC Devices

Eugene A. Imhoff; Fritz J. Kub; Karl D. Hobart

doi:10.4028/www.scientific.net/MSF.615-617.691

Paper Titles

Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
p.675

Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.679

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
p.683

Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
p.687

Grayscale Junction Termination for High-Voltage SiC Devices
p.691

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
p.695

Lifetime Investigations of 4H-SiC PiN Power Diodes
p.699

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
p.703

EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
p.707

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Grayscale Junction Termination for High-Voltage...

Grayscale Junction Termination for High-Voltage SiC Devices

Abstract:

In silicon carbide devices used above around 2.4 kV, effective anode edge termination usually requires a high-resolution floating guard ring implant or multiple lithography/implant cycles to effect a multi-zone junction termination extension. In general the goal is to produce a smoothly tapered field profile to prevent high-voltage field-crowding that causes premature breakdown at the edge of the high voltage electrode. Using a much simpler grayscale photolithographic technique and a single termination implant, we directly produce the desired tapered doping profile. The effectiveness of this termination is shown by the near-ideal (6.1 kV) breakdown measured in PiN diodes made with a 38 µm intrinsic layer. The simple method is applicable to the fabrication of many high-voltage devices.