Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer

Abstract:

Article Preview

The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The breakdown voltage of the graded p+-n junction was calculated using a commercial process/device simulator and considering the ion-implanted distribution of aluminum. To compare the calculated results to the experimental results, a p+/n/n+ diode with an aluminum ion-implanted p+-layer was fabricated on a 2.8-μm-thick 1.1 × 1017-cm-3 n-type epitaxial layer. The breakdown voltage of the fabricated diode showed a higher breakdown voltage than that of the calculation. The cause of the difference in the breakdown voltages between the fabricated diode and the calculation is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

675-678

DOI:

10.4028/www.scientific.net/MSF.615-617.675

Citation:

S. Ono et al., "Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer", Materials Science Forum, Vols. 615-617, pp. 675-678, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.