Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer

Shuichi Ono; S. Katakami; Manabu Arai

doi:10.4028/www.scientific.net/MSF.615-617.675

Paper Titles

Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement
p.659

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
p.663

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
p.667

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
p.671

Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
p.675

Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.679

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
p.683

Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
p.687

Grayscale Junction Termination for High-Voltage SiC Devices
p.691

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Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer

Abstract:

The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The breakdown voltage of the graded p+-n junction was calculated using a commercial process/device simulator and considering the ion-implanted distribution of aluminum. To compare the calculated results to the experimental results, a p+/n/n+ diode with an aluminum ion-implanted p+-layer was fabricated on a 2.8-μm-thick 1.1 × 1017-cm-3 n-type epitaxial layer. The breakdown voltage of the fabricated diode showed a higher breakdown voltage than that of the calculation. The cause of the difference in the breakdown voltages between the fabricated diode and the calculation is discussed.