Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud; Duy Minh Nguyen; Pierre Brosselard; Amador Pérez-Tomás; Dominique Planson; José Millan

doi:10.4028/www.scientific.net/MSF.615-617.671

Paper Titles

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
p.655

Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement
p.659

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
p.663

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
p.667

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
p.671

Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
p.675

Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.679

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
p.683

Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
p.687

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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Abstract:

Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.