Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Abstract:

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Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

671-674

DOI:

10.4028/www.scientific.net/MSF.615-617.671

Citation:

C. Raynaud et al., "Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses", Materials Science Forum, Vols. 615-617, pp. 671-674, 2009

Online since:

March 2009

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Price:

$35.00

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