Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Nicolas Dheilly; Dominique Planson; Pierre Brosselard; Jawad ul Hassan; Pascal Bevilacqua; Dominique Tournier; Josep Montserrat; Christophe Raynaud; Hervé Morel

doi:10.4028/www.scientific.net/MSF.615-617.703

Paper Titles

Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
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Grayscale Junction Termination for High-Voltage SiC Devices
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
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Lifetime Investigations of 4H-SiC PiN Power Diodes
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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
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EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
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VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications
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Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
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Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
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HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Measurement of Carrier Lifetime Temperature...

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Abstract:

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.