Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

Abstract:

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Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

715-718

DOI:

10.4028/www.scientific.net/MSF.615-617.715

Citation:

A. Ritenour et al., "Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications", Materials Science Forum, Vols. 615-617, pp. 715-718, 2009

Online since:

March 2009

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Price:

$35.00

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