Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

Andrew Ritenour; Volodymyr Bondarenko; Robin L. Kelley; David C. Sheridan

doi:10.4028/www.scientific.net/MSF.615-617.715

Paper Titles

Lifetime Investigations of 4H-SiC PiN Power Diodes
p.699

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
p.703

EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
p.707

VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications
p.711

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
p.715

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
p.719

High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
p.723

High Temperature Characteristics of 4H-SiC RESURF-Type JFET
p.727

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
p.731

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Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

Abstract:

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.