High Temperature Characteristics of 4H-SiC RESURF-Type JFET
400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the on-resistance, blocking and switching characteristics at high temperature were carried out. It was confirmed that the JFET has smaller dependence of on-resistance on temperature than a Si-MOSFET and positive temperature dependence of the breakdown voltage. It was also confirmed that the JFET has fast switching characteristics, that is, the turn-on and turn-off times are about 15 ns and 10 ns, at 200 °C as well as at 25 °C. A demonstration of a DC-DC converter using a module consisting of the JFET was carried out at a junction temperature of 200 °C. Stable continuous switching operation of the JFET at a junction temperature of 200 °C was confirmed.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
K. Fujikawa et al., "High Temperature Characteristics of 4H-SiC RESURF-Type JFET", Materials Science Forum, Vols. 615-617, pp. 727-730, 2009