High Temperature Characteristics of 4H-SiC RESURF-Type JFET

Kazuhiro Fujikawa; Kenichi Sawada; Hitoki Tokuda; Hideto Tamaso; Shin Harada; Jiro Shinkai; Takashi Tsuno; Yasuo Namikawa

doi:10.4028/www.scientific.net/MSF.615-617.727

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Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
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High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
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High Temperature Characteristics of 4H-SiC RESURF-Type JFET
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Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
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Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
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Critical Issues for MOS Based Power Devices in 4H-SiC
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High Temperature Characteristics of 4H-SiC RESURF-Type JFET

Abstract:

400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the on-resistance, blocking and switching characteristics at high temperature were carried out. It was confirmed that the JFET has smaller dependence of on-resistance on temperature than a Si-MOSFET and positive temperature dependence of the breakdown voltage. It was also confirmed that the JFET has fast switching characteristics, that is, the turn-on and turn-off times are about 15 ns and 10 ns, at 200 °C as well as at 25 °C. A demonstration of a DC-DC converter using a module consisting of the JFET was carried out at a junction temperature of 200 °C. Stable continuous switching operation of the JFET at a junction temperature of 200 °C was confirmed.