Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

Koji Yano; Yasunori Tanaka; Tsutomu Yatsuo; Akio Takatsuka; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.615-617.739

Paper Titles

High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
p.723

High Temperature Characteristics of 4H-SiC RESURF-Type JFET
p.727

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
p.731

Silicon Carbide Static Induction Transistor with Implanted Buried Gate
p.735

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
p.739

Critical Issues for MOS Based Power Devices in 4H-SiC
p.743

Performance of 60 A, 1200 V 4H-SiC DMOSFETs
p.749

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
p.753

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
p.757

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Short-Circuit Operation of SiC Buried Gate Static...

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

Abstract:

Short-circuit capabilities of silicon carbide static induction transistors with the buried gate structures (BGSITs) have been measured for the first time, and have been followed by 2D device simulations. The short-circuit operation of the normally-on type BGSITs is characterized by an abrupt decrease in the output current through a high peak in the initial phase of the short-circuit period, which is distinguished from that of the conventional IGBTs and power MOSFETs. This operation is caused by the inherent operation of the SITs including the non-saturating current-voltage characteristics with the unipolar operation. Decreasing the channel width adequately is a useful method to increase the short-circuit capability.