1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face

Masato Noborio; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.615-617.757

Paper Titles

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
p.739

Critical Issues for MOS Based Power Devices in 4H-SiC
p.743

Performance of 60 A, 1200 V 4H-SiC DMOSFETs
p.749

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
p.753

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
p.757

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
p.761

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
p.765

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
p.769

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
p.773

HomeMaterials Science ForumMaterials Science Forum Vols. 615-6171.5 kV Lateral Double RESURF MOSFETs on 4H-SiC...

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face

Abstract:

SiC lateral double RESURF MOSFETs have been fabricated on the 4H-SiC (000-1)C face. By utilizing the C face, the channel resistance can be reduced because the C-face MOSFETs show higher channel mobility than the Si-face MOSFETs. In addition, by employing the double RESURF structure, the drift resistance is decreased and the breakdown voltage is increased with increasing the RESURF doses. The fabricated RESURF MOSFETs on the 4H-SiC (000-1)C face have demonstrated a low on-resistance of 40 mΩcm2 at an oxide field of 3 MV/cm and a breakdown voltage of 1580 V at zero gate bias. The figure-of-merit of the MOSFET is 62 MW/cm2, which is more than 10 times better than the conventional “Si limit” and the highest value among any lateral MOSFETs to date.