Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

Abstract:

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In order to improve Silicon Carbide MOSFET device performance, it is important to minimize the on-state losses by improving the effective channel mobility, which can be done by decreasing interfacial charge consisting of interface traps, fixed charge, and oxide traps, which degrade mobility due to Coulombic scattering. This paper considers a method for distinguishing between oxide traps and fixed charge, and discusses how this charge has varied with processing over the last several years. Our results show that, over the period of study, NF has trended downward. Also, the number of switching oxide traps, which gives a lower bound for Not, appears to have decreased considerably. The trends for improvement in NF and ΔNot are promising, but our data suggests that NF and Not remain much too high and need to be reduced further to realize significant gains in SiC MOSFET performance.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

769-772

DOI:

10.4028/www.scientific.net/MSF.615-617.769

Citation:

D. B. Habersat et al., "Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge", Materials Science Forum, Vols. 615-617, pp. 769-772, 2009

Online since:

March 2009

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Price:

$35.00

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