Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175°C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted for the two processes.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
H. Naik et al., "Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 615-617, pp. 773-776, 2009