Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

Abstract:

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The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175°C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted for the two processes.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

773-776

DOI:

10.4028/www.scientific.net/MSF.615-617.773

Citation:

H. Naik et al., "Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 615-617, pp. 773-776, 2009

Online since:

March 2009

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Price:

$35.00

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