Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

Harsh Naik; K. Tang; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.615-617.773

Paper Titles

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
p.757

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
p.761

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
p.765

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
p.769

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
p.773

Effect of Oxidant in MOCVD-Growth of Al₂O₃ Gate Insulator on 4H-SiC MOSFET Properties
p.777

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
p.781

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
p.785

High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
p.789

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Effect of Graphite Cap for Implant Activation on...

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

Abstract:

The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175°C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted for the two processes.