High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

Sergey A. Reshanov; Svetlana Beljakowa; Thomas Frank; Bernd Zippelius; M. Krieger; Gerhard Pensl; Masato Noborio; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.615-617.765

Paper Titles

Performance of 60 A, 1200 V 4H-SiC DMOSFETs
p.749

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
p.753

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
p.757

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
p.761

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
p.765

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
p.769

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
p.773

Effect of Oxidant in MOCVD-Growth of Al₂O₃ Gate Insulator on 4H-SiC MOSFET Properties
p.777

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
p.781

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High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

Abstract:

Conventional MOSFETs and Hall-bar MOSFETs are fabricated side by side by over-oxidation of N-implanted or N-/Al-coimplanted 4H-SiC layers. It is demonstrated that the N-/Al-coimplanted MOSFETs possess a positive threshold voltage at room temperature and reach high values of the channel mobility. The effective electron mobility and Hall mobility in Hall-bar MOSFETs are 31 cm2/Vs and 150 cm2/Vs, respectively, indicating a high density of interface traps in spite of the excellent high mobility values.