High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

Abstract:

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Conventional MOSFETs and Hall-bar MOSFETs are fabricated side by side by over-oxidation of N-implanted or N-/Al-coimplanted 4H-SiC layers. It is demonstrated that the N-/Al-coimplanted MOSFETs possess a positive threshold voltage at room temperature and reach high values of the channel mobility. The effective electron mobility and Hall mobility in Hall-bar MOSFETs are 31 cm2/Vs and 150 cm2/Vs, respectively, indicating a high density of interface traps in spite of the excellent high mobility values.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

765-768

DOI:

10.4028/www.scientific.net/MSF.615-617.765

Citation:

S. A. Reshanov et al., "High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer", Materials Science Forum, Vols. 615-617, pp. 765-768, 2009

Online since:

March 2009

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$35.00

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