Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs

Takeshi Ohshima; Shinobu Onoda; Toshiro Kamada; Kazutoshi Hotta; Kenji Kawata; Osamu Eryu

doi:10.4028/www.scientific.net/MSF.615-617.781

Paper Titles

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
p.765

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
p.769

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
p.773

Effect of Oxidant in MOCVD-Growth of Al₂O₃ Gate Insulator on 4H-SiC MOSFET Properties
p.777

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
p.781

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
p.785

High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
p.789

Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
p.793

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
p.797

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Effects of the Surface Condition of the Substrates...

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs

Abstract:

Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type epitaxial 4H-SiC substrates with different surface conditions and these electrical characteristics were compared. The MOSFETs on Chemical Mechanical Polished substrates showed the drain current of the order of 10-12A at a gate voltage of 0 V, and the value of the drain current increased with increasing the surface roughness of substrates. With decreasing the surface roughness of substrates, the values of the threshold voltage decreased and the quality of gate oxide became better.