Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

R. Ramakrishna Rao; Kevin Matocha; Vinayak Tilak

doi:10.4028/www.scientific.net/MSF.615-617.797

Paper Titles

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
p.781

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
p.785

High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
p.789

Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
p.793

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
p.797

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
p.801

Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs
p.805

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
p.809

Channel Hot-Carrier Effect of 4H-SiC MOSFET
p.813

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Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

Abstract:

The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various scattering mechanisms that takes place at the surface. These scattering mechanisms are strong function of both the interface-trapped charge density and inversion-layer electron density. In this work, we develop a quasi-charge-sheet model to quantify coulomb scattering due to interface trapped-charge in SiC MOSFET inversion layers and calculate the inversion layer electron mobility.