Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various scattering mechanisms that takes place at the surface. These scattering mechanisms are strong function of both the interface-trapped charge density and inversion-layer electron density. In this work, we develop a quasi-charge-sheet model to quantify coulomb scattering due to interface trapped-charge in SiC MOSFET inversion layers and calculate the inversion layer electron mobility.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
R. R. Rao et al., "Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 615-617, pp. 797-800, 2009