Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs

Siddharth Potbhare; Neil Goldsman; Akin Akturk; Aivars J. Lelis; Ronald Green

doi:10.4028/www.scientific.net/MSF.615-617.805

Paper Titles

High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
p.789

Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
p.793

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
p.797

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
p.801

Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs
p.805

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
p.809

Channel Hot-Carrier Effect of 4H-SiC MOSFET
p.813

Low Frequency Noise in 4H-SiC MOSFETs
p.817

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT
p.821

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Investigation of On and Off State Characteristics...

Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs

Abstract:

We build upon our previous work on 4H SiC lateral MOSFETs to present physics based numerical modeling and characterization of a 4H-SiC DMOSFET operating in ON state. Comparison of simulated ON state characteristics to experiment shows that surface roughness scattering dominates at the operating bias of VGS=15V, whereas interface trap density contributes to reducing the inversion charge in the channel and thereby increasing the ON resistance. OFF state performance of the DMOSFET was modeled by considering impact ionization in the device. Excellent leakage characteristics were observed with the device blocking 2kV drain voltage. Impact ionization related breakdown was observed at 2048V drain bias.