Channel Hot-Carrier Effect of 4H-SiC MOSFET

Abstract:

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SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

813-816

DOI:

10.4028/www.scientific.net/MSF.615-617.813

Citation:

L. C. Yu et al., "Channel Hot-Carrier Effect of 4H-SiC MOSFET", Materials Science Forum, Vols. 615-617, pp. 813-816, 2009

Online since:

March 2009

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Price:

$35.00

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