Channel Hot-Carrier Effect of 4H-SiC MOSFET

Liang Chun Yu; Kin P. Cheung; John S. Suehle; Jason P. Campbell; Kuang Sheng; Aivars J. Lelis; Sei Hyung Ryu

doi:10.4028/www.scientific.net/MSF.615-617.813

Paper Titles

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
p.797

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
p.801

Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs
p.805

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
p.809

Channel Hot-Carrier Effect of 4H-SiC MOSFET
p.813

Low Frequency Noise in 4H-SiC MOSFETs
p.817

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT
p.821

Assessment of High and Low Temperature Performance of SiC BJTs
p.825

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
p.829

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Channel Hot-Carrier Effect of 4H-SiC MOSFET

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Abstract:

SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.