4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuously-grown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor using standard silane/propane chemistry and nitrogen and aluminum dopants. High performance 4H-SiC BJTs based on this initial non-optimized graded base doping have been demonstrated, including a 4H-SiC BJT with a DC current gain of ~33, specific on-resistance of 2.9 mcm2, and blocking voltage VCEO of over 1000 V.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
J. H. Zhang et al., "4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile", Materials Science Forum, Vols. 615-617, pp. 829-832, 2009