Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE

Benedetto Buono; Hyung Seok Lee; Martin Domeij; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.615-617.841

Paper Titles

Assessment of High and Low Temperature Performance of SiC BJTs
p.825

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
p.829

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
p.833

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
p.837

Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
p.841

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
p.845

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
p.849

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C
p.853

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

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Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE

Abstract:

Ion implantation for selective doping of SiC is problematic due to damage generation during the process and low activation of dopants. In SiC bipolar junction transistor (BJT) the junction termination extension (JTE) can be formed without ion implantation using instead a controlled etching into the epitaxial base. This etched JTE is advantageous because it eliminates ion implantation induced damage and the need for high temperature annealing. However, the dose, which is controlled by the etched base thickness and doping concentration, plays a crucial role. In order to find the optimum parameters, device simulations of different etched base thicknesses have been performed using the software Sentaurus Device. A surface passivation layer consisting of silicon dioxide, considering interface traps and fixed trapped charge, has been included in the analysis by simulations. Moreover a comparison with measured data for fabricated SiC BJTs has been performed.