4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Abstract:

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The spectrometric characteristics of detectors based on 4H-SiC films with ion-doped p+–n junctions in a temperature range from 25 to 375 °C have been studied. The experiments with 5.8-MeV α-particles in a high-temperature chamber were performed. The interference factors of the detectors operation in a mode of spectrometry are established. The energy resolution of 1.35% is received. An increase of the efficiency of the diffusion–drift charge transport with increasing temperature has been observed. The last is explained by an increase in the diffusion length of minority carriers.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

849-852

DOI:

10.4028/www.scientific.net/MSF.615-617.849

Citation:

A. M. Ivanov et al., "4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C", Materials Science Forum, Vols. 615-617, pp. 849-852, 2009

Online since:

March 2009

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Price:

$35.00

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