4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
The spectrometric characteristics of detectors based on 4H-SiC ﬁlms with ion-doped p+–n junctions in a temperature range from 25 to 375 °C have been studied. The experiments with 5.8-MeV α-particles in a high-temperature chamber were performed. The interference factors of the detectors operation in a mode of spectrometry are established. The energy resolution of 1.35% is received. An increase of the efﬁciency of the diffusion–drift charge transport with increasing temperature has been observed. The last is explained by an increase in the diffusion length of minority carriers.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. M. Ivanov et al., "4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C", Materials Science Forum, Vols. 615-617, pp. 849-852, 2009