4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Alexander M. Ivanov; Evgenia V. Kalinina; Nikita B. Strokan; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.615-617.849

Paper Titles

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
p.833

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
p.837

Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
p.841

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
p.845

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
p.849

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C
p.853

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
p.861

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
p.865

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4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Abstract:

The spectrometric characteristics of detectors based on 4H-SiC ﬁlms with ion-doped p+–n junctions in a temperature range from 25 to 375 °C have been studied. The experiments with 5.8-MeV α-particles in a high-temperature chamber were performed. The interference factors of the detectors operation in a mode of spectrometry are established. The energy resolution of 1.35% is received. An increase of the efﬁciency of the diffusion–drift charge transport with increasing temperature has been observed. The last is explained by an increase in the diffusion length of minority carriers.