Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
We investigated the energy spectra in p+n 6H-SiC diodes by a wide variety of charged particles with energies up to several hundred MeV. Though Pulse Height Defect (PHD) was detected when the samples were irradiated with high energy heavy ions (322MeV-Kr and 454MeV-Xe), linearity between pulse height (peak channel) and ion energy up to 150MeV was observed.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
S. Onoda et al., "Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV", Materials Science Forum, Vols. 615-617, pp. 861-864, 2009