Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

Abstract:

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We investigated the energy spectra in p+n 6H-SiC diodes by a wide variety of charged particles with energies up to several hundred MeV. Though Pulse Height Defect (PHD) was detected when the samples were irradiated with high energy heavy ions (322MeV-Kr and 454MeV-Xe), linearity between pulse height (peak channel) and ion energy up to 150MeV was observed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

861-864

DOI:

10.4028/www.scientific.net/MSF.615-617.861

Citation:

S. Onoda et al., "Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV", Materials Science Forum, Vols. 615-617, pp. 861-864, 2009

Online since:

March 2009

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Price:

$35.00

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