Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

Shinobu Onoda; Naoya Iwamoto; Makoto Murakami; Takeshi Ohshima; Toshio Hirao; Kazu Kojima; K. Kawano; I. Nakano

doi:10.4028/www.scientific.net/MSF.615-617.861

Paper Titles

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
p.845

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
p.849

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C
p.853

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
p.861

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
p.865

6H and 4H-SiC Avalanche Photodiodes
p.869

Solar-Blind 4H-SiC Avalanche Photodiodes
p.873

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
p.877

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Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

Abstract:

We investigated the energy spectra in p+n 6H-SiC diodes by a wide variety of charged particles with energies up to several hundred MeV. Though Pulse Height Defect (PHD) was detected when the samples were irradiated with high energy heavy ions (322MeV-Kr and 454MeV-Xe), linearity between pulse height (peak channel) and ion energy up to 150MeV was observed.