6H and 4H-SiC Avalanche Photodiodes

Abstract:

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We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark current was less than 1 pA at 0.5Vbr on multiple devices. Quantum efficiency of 40% or greater was observed for all orientations and polytypes.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

869-872

DOI:

10.4028/www.scientific.net/MSF.615-617.869

Citation:

L.B. Rowland et al., "6H and 4H-SiC Avalanche Photodiodes", Materials Science Forum, Vols. 615-617, pp. 869-872, 2009

Online since:

March 2009

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Price:

$35.00

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