6H and 4H-SiC Avalanche Photodiodes

L.B. Rowland; Jeffery L. Wyatt; Jody Fronheiser; Alexey V. Vert; Peter M. Sandvik; T. Borsa; J. Van Zeghbroeck; Bart Van Zeghbroeck; S. Babu

doi:10.4028/www.scientific.net/MSF.615-617.869

Paper Titles

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C
p.853

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
p.861

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
p.865

6H and 4H-SiC Avalanche Photodiodes
p.869

Solar-Blind 4H-SiC Avalanche Photodiodes
p.873

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
p.877

High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode
p.881

Silicon Carbide UV Based Photovoltaic for Hostile Environments
p.885

HomeMaterials Science ForumMaterials Science Forum Vols. 615-6176H and 4H-SiC Avalanche Photodiodes

6H and 4H-SiC Avalanche Photodiodes

Abstract:

We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark current was less than 1 pA at 0.5Vbr on multiple devices. Quantum efficiency of 40% or greater was observed for all orientations and polytypes.