Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability

Alexey V. Vert; Stanislav I. Soloviev; Jody Fronheiser; Peter M. Sandvik

doi:10.4028/www.scientific.net/MSF.615-617.877

Paper Titles

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
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Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
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6H and 4H-SiC Avalanche Photodiodes
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Solar-Blind 4H-SiC Avalanche Photodiodes
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Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
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High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode
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Silicon Carbide UV Based Photovoltaic for Hostile Environments
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Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems
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Applications of SiC-Transistors in Photovoltaic Inverters
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Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability

Abstract:

4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized for operation in Geiger mode. An estimated dark current at a gain of 1000 was ranging between 0.4 pA (0.75 nA/cm2) and 20nA (38 A/cm2) on devices with an effective mesa diameter of 260 m. The electron beam induced current technique was used to image defects in the active region of studied devices. Increased reverse bias leakage current and increased Geiger mode dark count probability were correlated with the presence of large number of defects. Single photon detection efficiencies of up to 11% were measured at a wavelength of 266 nm in Geiger mode.