Applications of SiC-Transistors in Photovoltaic Inverters

Dirk Kranzer; Bruno Burger; Nicolas Navarro; Olivier Stalter

doi:10.4028/www.scientific.net/MSF.615-617.895

Paper Titles

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
p.877

High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode
p.881

Silicon Carbide UV Based Photovoltaic for Hostile Environments
p.885

Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems
p.889

Applications of SiC-Transistors in Photovoltaic Inverters
p.895

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
p.899

Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
p.903

Comparison of SiC-JFET and Si-IGBT Inverter Losses
p.907

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
p.911

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Applications of SiC-Transistors in Photovoltaic Inverters

Abstract:

Currently there are several silicon carbide (SiC) field effect or bipolar transistor types in development with normally-on and normally-off characteristics. It is not yet clear, which transistor type will prevail in the market and which will remain a niche product. This is not only determined by their electrical characteristics, but also by their acceptance by engineers. In this paper the implementation and the performance of 1200 V / 20 A / 100 m SiC-DMOSFETS and 1200 V / 12 A / 125 m normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown.