Applications of SiC-Transistors in Photovoltaic Inverters
Currently there are several silicon carbide (SiC) field effect or bipolar transistor types in development with normally-on and normally-off characteristics. It is not yet clear, which transistor type will prevail in the market and which will remain a niche product. This is not only determined by their electrical characteristics, but also by their acceptance by engineers. In this paper the implementation and the performance of 1200 V / 20 A / 100 m SiC-DMOSFETS and 1200 V / 12 A / 125 m normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
D. Kranzer et al., "Applications of SiC-Transistors in Photovoltaic Inverters", Materials Science Forum, Vols. 615-617, pp. 895-898, 2009