Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs

Shuhei Nakata; Shin Ichi Kinouchi; T. Sawada; T. Oi; Tatsuo Oomori

doi:10.4028/www.scientific.net/MSF.615-617.903

Paper Titles

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Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems
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Applications of SiC-Transistors in Photovoltaic Inverters
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100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
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Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
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Comparison of SiC-JFET and Si-IGBT Inverter Losses
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High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
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Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design
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Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications
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Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs

Abstract:

For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We have successfully completed the operation of the SiC inverter module at continuous rating of up to 11kW with carrier frequency of 20 kHz. The power loss during the operation was measured by calorimetric method and the results showed that the loss was considerably reduced by 30% of a similar rating commercialized IGBT power module at carrier frequency of 15 kHz.