Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We have successfully completed the operation of the SiC inverter module at continuous rating of up to 11kW with carrier frequency of 20 kHz. The power loss during the operation was measured by calorimetric method and the results showed that the loss was considerably reduced by 30% of a similar rating commercialized IGBT power module at carrier frequency of 15 kHz.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
S. Nakata et al., "Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs", Materials Science Forum, Vols. 615-617, pp. 903-906, 2009