Comparison of SiC-JFET and Si-IGBT Inverter Losses

Immo Koch; Wolf Rüdiger Canders

doi:10.4028/www.scientific.net/MSF.615-617.907

Paper Titles

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Applications of SiC-Transistors in Photovoltaic Inverters
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Comparison of SiC-JFET and Si-IGBT Inverter Losses
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High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
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Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design
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Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications
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300°C SiC Blocking Diodes for Solar Array Strings
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HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Comparison of SiC-JFET and Si-IGBT Inverter Losses

Comparison of SiC-JFET and Si-IGBT Inverter Losses

Abstract:

Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size necessitates the regard to the active area of the chip. The paper presents measurement results considering the active area and shows a comparison of inverter losses depending on junction temperature and switching frequency.