Comparison of SiC-JFET and Si-IGBT Inverter Losses

Abstract:

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Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size necessitates the regard to the active area of the chip. The paper presents measurement results considering the active area and shows a comparison of inverter losses depending on junction temperature and switching frequency.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

907-910

DOI:

10.4028/www.scientific.net/MSF.615-617.907

Citation:

I. Koch and W. R. Canders, "Comparison of SiC-JFET and Si-IGBT Inverter Losses", Materials Science Forum, Vols. 615-617, pp. 907-910, 2009

Online since:

March 2009

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Price:

$35.00

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