Comparison of SiC-JFET and Si-IGBT Inverter Losses
Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size necessitates the regard to the active area of the chip. The paper presents measurement results considering the active area and shows a comparison of inverter losses depending on junction temperature and switching frequency.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
I. Koch and W. R. Canders, "Comparison of SiC-JFET and Si-IGBT Inverter Losses", Materials Science Forum, Vols. 615-617, pp. 907-910, 2009