100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

Peter A. Losee; Kevin Matocha; Steve Arthur; Eladio Delgado; Richard Beaupre; A. Pautsch; R. Ramakrishna Rao; Jeff Nasadoski; Jerome L. Garrett; Zachary Stum; Ljubisa Stevanovic; Rosa Ana Conte; Keith Monaghan

doi:10.4028/www.scientific.net/MSF.615-617.899

Paper Titles

High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode
p.881

Silicon Carbide UV Based Photovoltaic for Hostile Environments
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Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems
p.889

Applications of SiC-Transistors in Photovoltaic Inverters
p.895

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
p.899

Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
p.903

Comparison of SiC-JFET and Si-IGBT Inverter Losses
p.907

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
p.911

Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design
p.915

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100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

Abstract:

The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.