100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

Abstract:

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The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

899-902

DOI:

10.4028/www.scientific.net/MSF.615-617.899

Citation:

P. A. Losee et al., "100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules", Materials Science Forum, Vols. 615-617, pp. 899-902, 2009

Online since:

March 2009

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Price:

$35.00

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