Solar-Blind 4H-SiC Avalanche Photodiodes

Stanislav I. Soloviev; Alexey V. Vert; Jody Fronheiser; Peter M. Sandvik

doi:10.4028/www.scientific.net/MSF.615-617.873

Paper Titles

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
p.861

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
p.865

6H and 4H-SiC Avalanche Photodiodes
p.869

Solar-Blind 4H-SiC Avalanche Photodiodes
p.873

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
p.877

High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode
p.881

Silicon Carbide UV Based Photovoltaic for Hostile Environments
p.885

Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems
p.889

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Solar-Blind 4H-SiC Avalanche Photodiodes

Solar-Blind 4H-SiC Avalanche Photodiodes

Abstract:

In this work, solar-blind UV 4H-SiC avalanche photodetectors were fabricated and tested in linear and Geiger modes. APDs with both PIN and separate absorption and multiplication (SAM) structures were investigated. PIN structures demonstrated higher quantum efficiencies while the SAM structure exhibit lower leakage currents. Deposition of a thin film optical filter on top of the devices was used to provide a high photon rejection ratio of (Stas add value here). However, an external filter showed a better photon rejection ratio compared to the deposited one by about one order of magnitude.