Solar-Blind 4H-SiC Avalanche Photodiodes

Abstract:

Article Preview

In this work, solar-blind UV 4H-SiC avalanche photodetectors were fabricated and tested in linear and Geiger modes. APDs with both PIN and separate absorption and multiplication (SAM) structures were investigated. PIN structures demonstrated higher quantum efficiencies while the SAM structure exhibit lower leakage currents. Deposition of a thin film optical filter on top of the devices was used to provide a high photon rejection ratio of (Stas add value here). However, an external filter showed a better photon rejection ratio compared to the deposited one by about one order of magnitude.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

873-876

DOI:

10.4028/www.scientific.net/MSF.615-617.873

Citation:

S. I. Soloviev et al., "Solar-Blind 4H-SiC Avalanche Photodiodes", Materials Science Forum, Vols. 615-617, pp. 873-876, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.