Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Donatella Puglisi; Gaetano Foti; Giuseppe Bertuccio

doi:10.4028/www.scientific.net/MSF.615-617.857

Paper Titles

Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
p.841

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
p.845

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
p.849

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C
p.853

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
p.861

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
p.865

6H and 4H-SiC Avalanche Photodiodes
p.869

Solar-Blind 4H-SiC Avalanche Photodiodes
p.873

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Diffusion Length in n-Doped 4H Silicon Carbide...

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Abstract:

The achievement of nuclear detectors in Silicon Carbide imposes severe constraints on the electronic quality and thickness of the material due to the relatively high value of the energy required to generate an electron-hole pair (7.8 eV) in this material compared to the value for Si (3.6 eV). In this work, 4H-SiC charged particle detectors were realised using epitaxial layers of n-type doping as active region. The thickness of the epilayer is always below 80 μm with a net doping concentration in the range of 8 x 1013 to 1016 cm-3. These properties allowed the fabrication of Schottky diodes that operate well as radiation detectors. At low doping concentration, the epilayer is totally depleted at quite low reverse bias (≈ 50 V), thereby obtaining the maximum active volume.