Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

Stanislav I. Soloviev; Alexey V. Vert; Jody Fronheiser; Peter M. Sandvik

doi:10.4028/www.scientific.net/MSF.615-617.865

Paper Titles

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
p.849

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C
p.853

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
p.857

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
p.861

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
p.865

6H and 4H-SiC Avalanche Photodiodes
p.869

Solar-Blind 4H-SiC Avalanche Photodiodes
p.873

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
p.877

High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode
p.881

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Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

Abstract:

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.