Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Abstract:

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In this study, high voltage blocking (2.7 kV) implantation-free SiC Bipolar Junction Transistors with low on-state resistance (12 mΩ•cm2) and high common-emitter current gain of 50 have been fabricated. A graded base doping was implemented to provide a low resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high temperature dopant activation annealing and for avoiding generation of life-time killing defects that reduces the current gain. Also in this process large area transistors showed common-emitter current gain of 38 and open-base breakdown voltage of 2 kV.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

833-836

DOI:

10.4028/www.scientific.net/MSF.615-617.833

Citation:

R. Ghandi et al., "Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability", Materials Science Forum, Vols. 615-617, pp. 833-836, 2009

Online since:

March 2009

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Price:

$35.00

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