Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Reza Ghandi; Hyung Seok Lee; Martin Domeij; Benedetto Buono; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.615-617.833

Paper Titles

Low Frequency Noise in 4H-SiC MOSFETs
p.817

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT
p.821

Assessment of High and Low Temperature Performance of SiC BJTs
p.825

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
p.829

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
p.833

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
p.837

Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
p.841

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
p.845

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
p.849

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Implantation-Free Low On-Resistance 4H-SiC BJTs...

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Abstract:

In this study, high voltage blocking (2.7 kV) implantation-free SiC Bipolar Junction Transistors with low on-state resistance (12 mΩ•cm2) and high common-emitter current gain of 50 have been fabricated. A graded base doping was implemented to provide a low resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high temperature dopant activation annealing and for avoiding generation of life-time killing defects that reduces the current gain. Also in this process large area transistors showed common-emitter current gain of 38 and open-base breakdown voltage of 2 kV.