Ab Initio Calculations of SiO2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face

Eiichi Okuno; Takeshi Endo; Toshio Sakakibara; Shoichi Onda; Makoto Itoh; Tsuyoshi Uda

doi:10.4028/www.scientific.net/MSF.615-617.793

Paper Titles

Effect of Oxidant in MOCVD-Growth of Al₂O₃ Gate Insulator on 4H-SiC MOSFET Properties
p.777

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
p.781

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
p.785

High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
p.789

Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
p.793

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
p.797

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
p.801

Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs
p.805

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
p.809

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Ab Initio Calculations of SiO2/SiC Interfaces and...

Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face

Abstract:

Ab initio calculations were carried out to study the origin of the trap at the SiO2/SiC (MOS: Metal-Oxide-Semiconductor) interface with the three different faces of the substrate, (0001), (000-1), and (11-20). In a previous report we experimentally discovered that the (11-20) face is suitable for high channel mobility. The calculation in this report showed that the MOS interface achieved the intermediate states due to distortion and thus acted like an interface trap. The interface trap density of the MOS interface on the (11-20) face substrate was smaller than those on the other faces. The interface trap densities were 2.14, 3.36, and 1.40 in units of 1015 cm-2 for the above listed substrate orientations, respectively. For clarity, the channel mobility was compared experimentally to reveal that it realized a larger value for the (11-20) substrate than the other two faces. From our results, we concluded that (11-20) face substrate was more suitable for high power device applications than the (0001) face or (000-1) face substrates.