Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

Harsh Naik; K. Tang; T. Marron; T. Paul Chow; Jody Fronheiser

doi:10.4028/www.scientific.net/MSF.615-617.785

Paper Titles

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
p.769

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
p.773

Effect of Oxidant in MOCVD-Growth of Al₂O₃ Gate Insulator on 4H-SiC MOSFET Properties
p.777

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
p.781

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
p.785

High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
p.789

Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
p.793

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
p.797

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
p.801

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Comparison of 4H-SiC MOSFETs on (0001), (000-1)...

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

Abstract:

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low- temperature deposited oxide followed by NO anneal at 1175°C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225°C was also performed.