Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

Abstract:

Article Preview

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low- temperature deposited oxide followed by NO anneal at 1175°C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225°C was also performed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

785-788

DOI:

10.4028/www.scientific.net/MSF.615-617.785

Citation:

H. Naik et al., "Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates", Materials Science Forum, Vols. 615-617, pp. 785-788, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.