Electro-Thermal SPICE Model for High-Voltage SiC VJFETs

Rudolf Elpelt; Peter Friedrichs; J. Hippeli; Reinhold Schörner; Michael Treu; Peter Türkes

doi:10.4028/www.scientific.net/MSF.615-617.731

Paper Titles

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
p.715

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
p.719

High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
p.723

High Temperature Characteristics of 4H-SiC RESURF-Type JFET
p.727

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
p.731

Silicon Carbide Static Induction Transistor with Implanted Buried Gate
p.735

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
p.739

Critical Issues for MOS Based Power Devices in 4H-SiC
p.743

Performance of 60 A, 1200 V 4H-SiC DMOSFETs
p.749

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Electro-Thermal SPICE Model for High-Voltage SiC VJFETs

Abstract:

After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.