Electro-Thermal SPICE Model for High-Voltage SiC VJFETs

Abstract:

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After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

731-734

DOI:

10.4028/www.scientific.net/MSF.615-617.731

Citation:

R. Elpelt et al., "Electro-Thermal SPICE Model for High-Voltage SiC VJFETs", Materials Science Forum, Vols. 615-617, pp. 731-734, 2009

Online since:

March 2009

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Price:

$35.00

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