Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
R. Elpelt et al., "Electro-Thermal SPICE Model for High-Voltage SiC VJFETs", Materials Science Forum, Vols. 615-617, pp. 731-734, 2009