EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes

Takasumi Ohyanagi; Chen Bin; Takashi Sekiguchi; Hirotaka Yamaguchi; Hirofumi  Matsuhata

doi:10.4028/www.scientific.net/MSF.615-617.707

Paper Titles

Grayscale Junction Termination for High-Voltage SiC Devices
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
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Lifetime Investigations of 4H-SiC PiN Power Diodes
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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
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EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
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VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications
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Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
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Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
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High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress
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EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes

Abstract:

The breakdown failure points in the 4H-SiC PiN diodes were analyzed by the electron beam induced current (EBIC). We focused on the failure, which showed the avalanche breakdown, and we determined the failure points by an emission microscopy. We observed the basal plane dislocation around the failure point and at measured temperatures below 200K we found the dark spots in the EBIC. However, in the X-ray topography image, no spots were found around the dislocations. We therefore think that these spots originated from the metal contamination. The electric field was multiplied due to a permittivity change, and this multiplication caused the avalanche breakdown.